Infineon IPL N-Channel MOSFET, 9.4 A, 700 V, 5-Pin ThinPAK 5x6 IPLK70R2K0P7ATMA1
- RS Stock No.:
- 240-8540
- Mfr. Part No.:
- IPLK70R2K0P7ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD213.00
(exc. GST)
TWD223.65
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 800 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD42.60 | TWD213.00 |
| 10 - 95 | TWD41.80 | TWD209.00 |
| 100 - 245 | TWD40.60 | TWD203.00 |
| 250 - 495 | TWD39.80 | TWD199.00 |
| 500 + | TWD38.40 | TWD192.00 |
*price indicative
- RS Stock No.:
- 240-8540
- Mfr. Part No.:
- IPLK70R2K0P7ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | IPL | |
| Package Type | ThinPAK 5x6 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Maximum Power Dissipation Pd | 25.5W | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.35mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series IPL | ||
Package Type ThinPAK 5x6 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Maximum Power Dissipation Pd 25.5W | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.35mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolMOS™ P7 super junction (SJ) MOSFET family is designed to address typical challenges in the low-power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The ThinPAK 5x6 package is characterized by a very small footprint of 5x6 mm² and a very low profile with a height of 1 mm. Together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. This combination makes CoolMOS™ P7 in ThinPAK a perfect fit for its target applications. The 700V CoolMOS™ P7 family is optimized for flyback topologies.
Extremely low losses
Excellent thermal behaviour
Integrated ESD protection diode
Low switching glosses(Eoss)
Fully qualified acc. JEDEC for Industrial Applications
Best-in-class quality and reliability
Low EMI
Wide range of RDS(on) values
Fully optimized portfolio
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