Infineon ISC Type N-Channel MOSFET, 330 A, 25 V, 8-Pin SuperSO8 5 x 6
- RS Stock No.:
- 240-6374
- Mfr. Part No.:
- ISC010N06NM5
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 5000 units)*
TWD368,500.00
(exc. GST)
TWD386,900.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 5,000 unit(s) shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | TWD73.70 | TWD368,500.00 |
| 10000 + | TWD71.50 | TWD357,500.00 |
*price indicative
- RS Stock No.:
- 240-6374
- Mfr. Part No.:
- ISC010N06NM5
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 330A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 171W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 330A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SuperSO8 5 x 6 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 171W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™ 5 Single N-Channel Power MOSFET 60 V, 1.05 mΩ, 330 A in a SSO8 package. Infineon’s OptiMOS™ 5 Power MOSFET 60V in SuperSO8 package ISC010N06NM5 offers low on-state resistance RDS on at 25˚C and 175˚C, and high continuous current up to 330 A. Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge Qrr improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Optimized for synchronous rectification
100% avalanche tested
Superior thermal resistance
N-channel
175°Crated
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Higher solder joint reliability due to enlarged source interconnection
Related links
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