Vishay Type P-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PowerPAK 1212-8W SQS405CENW-T1_GE3
- RS Stock No.:
- 239-8685
- Mfr. Part No.:
- SQS405CENW-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD645.00
(exc. GST)
TWD677.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 3,025 unit(s) shipping from September 21, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | TWD25.80 | TWD645.00 |
| 50 - 75 | TWD25.30 | TWD632.50 |
| 100 - 225 | TWD24.80 | TWD620.00 |
| 250 - 975 | TWD24.40 | TWD610.00 |
| 1000 + | TWD24.00 | TWD600.00 |
*price indicative
- RS Stock No.:
- 239-8685
- Mfr. Part No.:
- SQS405CENW-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 214A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212-8W | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 197W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 125°C | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 214A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212-8W | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 197W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 125°C | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQS is automotive P-Channel MOSFET which operates at 40 V and 175 °C temperature. This MOSFET used for high power density.
AEC-Q101 qualified
UIS tested
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