Vishay Type N-Channel MOSFET, 445 A, 30 V Depletion, 4-Pin PowerPAK (8x8L) SQJQ112E-T1_GE3
- RS Stock No.:
- 239-8676
- Mfr. Part No.:
- SQJQ112E-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD276.00
(exc. GST)
TWD289.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Supply shortage
- Plus 1,650 left, shipping from May 25, 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | TWD138.00 | TWD276.00 |
| 50 - 98 | TWD136.50 | TWD273.00 |
| 100 - 248 | TWD133.50 | TWD267.00 |
| 250 - 998 | TWD131.50 | TWD263.00 |
| 1000 + | TWD128.00 | TWD256.00 |
*price indicative
- RS Stock No.:
- 239-8676
- Mfr. Part No.:
- SQJQ112E-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 445A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00253Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 255W | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 445A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00253Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 255W | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 125°C | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is automotive Gen IV power N-Channel MOSFET which operates at 100 V and 175 °C temperature. This MOSFET used for high power density.
AEC-Q101 qualified
UIS tested
Thin package
Related links
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