Vishay EF Type N-Channel MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8
- RS Stock No.:
- 239-8631
- Mfr. Part No.:
- SiHH105N60EF-T1GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
TWD301,200.00
(exc. GST)
TWD316,260.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from November 23, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | TWD100.40 | TWD301,200.00 |
| 15000 + | TWD97.40 | TWD292,200.00 |
*price indicative
- RS Stock No.:
- 239-8631
- Mfr. Part No.:
- SiHH105N60EF-T1GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.09Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 174W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 8 x 8 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.09Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 174W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 26A Continuous Drain Current - SiHH105N60EF-T1GE3
This power MOSFET is a high-voltage, N‑channel device intended for switching and power-conversion roles in automotive and industrial electronics. It operates across a wide temperature span and is designed as a surface‑mount component for Compact assemblies, providing robust high-voltage switching where thermal endurance and automotive qualification are required.
Features and Benefits:
• 650V drain voltage enables high-voltage switching applications • 26A continuous drain current supports sustained load currents • 0.091Ω low Rds(on) reduces conduction losses in switching stages • 174W power dissipation allows higher power handling in Compact layouts • 33nC typical gate charge facilitates controlled gate‑drive energy • ±30V gate tolerance accommodates varied gate‑drive voltages
Applications
• Suitable for automotive power converters and traction systems • Ideal for high-voltage switch‑mode power supplies in industrial automation • Used for inverter stages in motor‑drive • Can be used for primary‑side switching in SMPS topologies
What thermal range can this device tolerate during operation?
It is rated to operate from -55°C up to +150°C, allowing use in environments with large temperature variations.
How does the pin count and mounting affect PCB layout?
The four‑pin surface‑mount PowerPAK 8x8 package simplifies thermal routing and allows low‑inductance connections for high‑speed switching.
What gate‑drive considerations are necessary for reliable switching?
Gate drive should respect the ±30V maximum Vgs and be designed to manage the 33nC gate charge to control switching speed and minimise EMI.
Is the device suitable for automotive qualification requirements?
It complies with the AEC‑Q101 standard and is RoHS compliant, meeting typical automotive component acceptance criteria.
Related links
- Vishay EF Type N-Channel MOSFET 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 5-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3