Vishay EF Type N-Channel Power MOSFET, 6 A, 850 V Depletion, 3-Pin TO-220 SIHA15N80AEF-GE3
- RS Stock No.:
- 239-8620
- Mfr. Part No.:
- SIHA15N80AEF-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD317.00
(exc. GST)
TWD332.85
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 970 unit(s) shipping from July 20, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD63.40 | TWD317.00 |
| 10 - 20 | TWD62.00 | TWD310.00 |
| 25 - 95 | TWD60.80 | TWD304.00 |
| 100 - 495 | TWD59.80 | TWD299.00 |
| 500 + | TWD57.60 | TWD288.00 |
*price indicative
- RS Stock No.:
- 239-8620
- Mfr. Part No.:
- SIHA15N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | EF | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.35Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series EF | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.35Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 850V Drain Source Voltage, 6A Continuous Drain Current - SIHA15N80AEF-GE3
This power MOSFET is a high-voltage switching transistor intended for demanding electronic and automotive environments. It functions as an N-channel depletion device in a rugged TO-220 surface package, designed to handle elevated voltages and temperatures while interfacing with standard gate-drive levels.
Features and Benefits:
• 850V drain rating enables high-voltage switching applications • 6 A continuous drain current supports moderate load currents • 33W power dissipation allows sustained thermal handling • 0.35 Ω Rds(on) reduces conduction losses under load • 54 nC typical gate charge permits controlled switching dynamics • 30V maximum gate tolerance protects against gate overvoltage
Applications
• Suitable for high-voltage power supplies in industrial automation • Ideal for automotive subsystems requiring AEC‑Q101 compliance • Used for motor-control circuits needing robust switching devices • Can be used for DC-DC converters in electrical systems • Used with high-voltage inverter stages in electromechanical equipment
What temperature extremes can this device tolerate in operation?
It operates across a wide temperature span from -55 °C up to +150 °C, permitting use in harsh thermal environments.
How is the device mounted and integrated into assemblies?
It is supplied in a TO-220 surface-mount package with three pins for straightforward through-panel or heatsink-attached mounting.
What protection level is provided for environmental directives?
The component meets RoHS standards, indicating restricted hazardous substance compliance for materials.
How does the gate specification affect drive circuitry?
The gate accepts up to 30 V, so driver stages should be designed to remain within this limit to avoid gate stress.
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