STMicroelectronics STP N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 239-5543
- Mfr. Part No.:
- STP80N240K6
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD7,470.00
(exc. GST)
TWD7,843.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 20, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD149.40 | TWD7,470.00 |
| 100 - 100 | TWD146.40 | TWD7,320.00 |
| 150 + | TWD143.50 | TWD7,175.00 |
*price indicative
- RS Stock No.:
- 239-5543
- Mfr. Part No.:
- STP80N240K6
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 28.9mm | |
| Height | 4.6mm | |
| Standards/Approvals | UL | |
| Width | 10.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 28.9mm | ||
Height 4.6mm | ||
Standards/Approvals UL | ||
Width 10.4mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. This MOSFET is Recommended for flyback topology, based applications such as LED lighting, chargers and adapters. Provide more power density reducing both BOM cost and size of the board.
Worldwide best RDS(on) x area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
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