Vishay SiR588DP Type N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3
- RS Stock No.:
- 239-5394
- Mfr. Part No.:
- SiR588DP-T1-RE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD260.00
(exc. GST)
TWD273.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,850 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD26.00 | TWD260.00 |
| 50 - 90 | TWD25.20 | TWD252.00 |
| 100 - 240 | TWD24.40 | TWD244.00 |
| 250 - 990 | TWD23.80 | TWD238.00 |
| 1000 + | TWD23.10 | TWD231.00 |
*price indicative
- RS Stock No.:
- 239-5394
- Mfr. Part No.:
- SiR588DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR588DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.008Ω | |
| Typical Gate Charge Qg @ Vgs | 14.2nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 59.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.15mm | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8 | ||
Series SiR588DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.008Ω | ||
Typical Gate Charge Qg @ Vgs 14.2nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 59.5W | ||
Maximum Operating Temperature 150°C | ||
Width 5.15mm | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Automotive Standard No | ||
Vishay SiR588DP Series MOSFET, 80V Maximum Drain Source Voltage, 59.5A Maximum Continuous Drain Current - SiR588DP-T1-RE3
This n-channel MOSFET is a surface-mount power transistor designed to switch and handle high currents in Compact electronic assemblies. It operates across a wide temperature span and is suited to applications requiring robust voltage handling and efficient conduction in a small package.
Features and Benefits:
• 80V drain voltage enables high-voltage switching applications • 59.5A continuous drain current supports heavy-load operation • 0.008Ω low Rds(on) reduces conduction losses and heating • 14.2nC typical gate charge enables Faster switching transitions • 59.5W power dissipation allows sustained power handling • 150°C maximum operating temperature tolerates elevated thermal environments
Applications
• Suitable for motor drive stages in industrial automation systems • Ideal for high-current DC-DC converters and power supplies • Used for switching elements in power distribution modules • Can be used for load switching in HVAC and control equipment • Suitable for Compact SMD power assemblies where board space is limited
What gate voltage constraints must be observed for safe operation?
The gate-to-source voltage must be kept within ±20V to prevent gate oxide stress.
How does the package affect thermal management on a board?
The PowerPAK SO-8 8-pin surface-mount package concentrates the thermal path through the substrate, so good PCB copper area and thermal vias improve heat dissipation.
What ambient conditions define the device’s operational limits?
The device is specified for use down to -55°C and up to 150°C junction temperature for high-temperature environments.
How does the device’s forward voltage relate to conduction behaviour?
The forward voltage of 1.1V indicates the expected diode conduction drop when the intrinsic body diode conducts during reverse-recovery or hard commutation events.
Related links
- Vishay SiR Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR586DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR584DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SiR4602LDP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR184LDP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3