Microchip VP0106 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92
- RS Stock No.:
- 236-8962P
- Mfr. Part No.:
- VP0106N3-G
- Manufacturer:
- Microchip
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal 50 units (supplied in a bag)*
TWD1,780.00
(exc. GST)
TWD1,869.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 520 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 90 | TWD35.60 |
| 100 - 240 | TWD34.80 |
| 250 - 490 | TWD34.20 |
| 500 + | TWD33.70 |
*price indicative
- RS Stock No.:
- 236-8962P
- Mfr. Part No.:
- VP0106N3-G
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-92 | |
| Series | VP0106 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-92 | ||
Series VP0106 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Related links
- RS PRO Black 3 mm² Hook Up Wire 30m
- RS PRO RS-172 Temperature & Humidity Data Logger
- 2961105 | Phoenix Contact PCB Mount Power Relay 6A Switching Current, SPDT
- Tedea Huntleigh Low Profile Load Cell Compression Measure
- ABB D45 Pluto Series Safety Controller 6 Safety Outputs, 24 V dc
- TE Connectivity Coaxial Cable RG400 Coaxial, Unterminated
- RS PRO I/O Extension Module for Use with RS PRO Logic Modules Digital
- Fluke 289 Handheld Digital Multimeter 10A ac Max 1000V ac Max