Infineon CoolMOS Type N-Channel MOSFET, 19 A, 700 V, 3-Pin TO-247 IPW65R125CFD7XKSA1
- RS Stock No.:
- 236-3676
- Mfr. Part No.:
- IPW65R125CFD7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD308.00
(exc. GST)
TWD323.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 226 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD154.00 | TWD308.00 |
| 10 - 98 | TWD150.00 | TWD300.00 |
| 100 - 248 | TWD146.50 | TWD293.00 |
| 250 - 498 | TWD143.00 | TWD286.00 |
| 500 + | TWD140.00 | TWD280.00 |
*price indicative
- RS Stock No.:
- 236-3676
- Mfr. Part No.:
- IPW65R125CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 98W | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.5mm | |
| Standards/Approvals | No | |
| Length | 16.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 98W | ||
Maximum Operating Temperature 150°C | ||
Height 21.5mm | ||
Standards/Approvals No | ||
Length 16.3mm | ||
Automotive Standard No | ||
The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 15 A.
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Outstanding light-load efficiency in industrial SMPS applications
Improved full-load efficiency in industrial SMPS applications
Price competitiveness compared to alternative offerings in the market
Related links
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- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 700 V, 4-Pin TO-247-4 IPZA65R018CFD7XKSA1