Toshiba Type P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T
- RS Stock No.:
- 236-3573
- Mfr. Part No.:
- SSM3J356R,LF(T
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 50 units)*
TWD285.00
(exc. GST)
TWD299.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 200 unit(s) ready to ship from another location
- Plus 2,350 unit(s) shipping from February 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | TWD5.70 | TWD285.00 |
| 100 - 200 | TWD5.60 | TWD280.00 |
| 250 - 450 | TWD5.50 | TWD275.00 |
| 500 - 950 | TWD5.30 | TWD265.00 |
| 1000 + | TWD5.20 | TWD260.00 |
*price indicative
- RS Stock No.:
- 236-3573
- Mfr. Part No.:
- SSM3J356R,LF(T
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.4mm | |
| Width | 2.9 mm | |
| Height | 0.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.4mm | ||
Width 2.9 mm | ||
Height 0.8mm | ||
Automotive Standard No | ||
The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
Related links
- Toshiba Type P-Channel MOSFET 60 V, 3-Pin SOT-23
- Toshiba Type P-Channel MOSFET 60 VLF(T
- Toshiba Type P-Channel MOSFET 20 V, 3-Pin SOT-23
- Toshiba Type P-Channel MOSFET 12 VLF(T
- Toshiba Type P-Channel MOSFET 20 VLF(T
- Toshiba Type P-Channel MOSFET 30 V EnhancementLF(T
- Toshiba Type N-Channel MOSFET 40 V, 3-Pin SOT-23
- Toshiba Type N-Channel MOSFET 40 VLF(T