Infineon ISC Type N-Channel MOSFET, 31 A, 100 V, 8-Pin TDSON ISC230N10NM6ATMA1
- RS Stock No.:
- 235-4873
- Mfr. Part No.:
- ISC230N10NM6ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD121.00
(exc. GST)
TWD127.05
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 4,065 unit(s) shipping from January 26, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD24.20 | TWD121.00 |
| 10 - 95 | TWD23.80 | TWD119.00 |
| 100 - 245 | TWD23.20 | TWD116.00 |
| 250 - 495 | TWD22.80 | TWD114.00 |
| 500 + | TWD22.40 | TWD112.00 |
*price indicative
- RS Stock No.:
- 235-4873
- Mfr. Part No.:
- ISC230N10NM6ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.05mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.35mm | |
| Width | 1.2 mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.05mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Height 5.35mm | ||
Width 1.2 mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 6 industrial power MOSFET 100V is designed for high switching frequency application such as telecom and server power supply, but also the Ideal choice for other applications such as solar, power tools and drones. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.
Lower and softer reverse recovery charge
Ideal for high switching frequency
High avalanche energy rating
RoHS compliant
Low conduction losses
Low switching losses
Environmentally friendly
Related links
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