Infineon ISC Type N-Channel MOSFET, 170 A, 40 V, 8-Pin TDSON-8 FL ISC019N04NM5ATMA1
- RS Stock No.:
- 234-6997
- Mfr. Part No.:
- ISC019N04NM5ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD318.00
(exc. GST)
TWD333.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 3,870 unit(s) shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD63.60 | TWD318.00 |
| 10 - 95 | TWD62.60 | TWD313.00 |
| 100 - 245 | TWD61.00 | TWD305.00 |
| 250 - 495 | TWD60.00 | TWD300.00 |
| 500 + | TWD59.00 | TWD295.00 |
*price indicative
- RS Stock No.:
- 234-6997
- Mfr. Part No.:
- ISC019N04NM5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON-8 FL | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 115W | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 4.4mm | |
| Height | 3.8mm | |
| Standards/Approvals | No | |
| Width | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON-8 FL | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 115W | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Operating Temperature 175°C | ||
Length 4.4mm | ||
Height 3.8mm | ||
Standards/Approvals No | ||
Width 1.1mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 power transistor N-channel MOSFET has 40V drain source breakdown voltage and 170A continuous drain current. This product offers a Benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios reduce the Peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.
Battery powered application
LV motor drives
Very low on-resistanceRDS(on)
100% avalanche tested
175°C junction temperature
Superior thermal resistance
Low gate charge
Reduced switching losses
Suitable for operation at higher frequencies
N-channel
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
Related links
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC019N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC017N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC028N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC058N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC036N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC046N04NM5ATMA1
- Infineon ISC Type N-Channel Power Transistor 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC032N12LM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 200 V Enhancement, 8-Pin PG-TDSON-8 FL ISC151N20NM6ATMA1