STMicroelectronics STHU36N N-Channel MOSFET, 29 A, 600 V, 7-Pin HU3PAK STHU36N60DM6AG

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Subtotal (1 unit)*

TWD163.00

(exc. GST)

TWD171.15

(inc. GST)

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Units
Per unit
1 - 9TWD163.00
10 - 99TWD160.00
100 - 249TWD156.00
250 - 499TWD153.00
500 +TWD149.00

*price indicative

Packaging Options:
RS Stock No.:
234-8898
Mfr. Part No.:
STHU36N60DM6AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

HU3PAK

Series

STHU36N

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

99mΩ

Maximum Power Dissipation Pd

210W

Maximum Gate Source Voltage Vgs

25V

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

46nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The STMicroelectronics high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

AEC-Q101 qualified

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

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