Renesas Electronics Type N-Channel MOSFET, 25 A, 60 V Enhancement, 4-Pin SOT-669 RJK0651DPB-00#J5
- RS Stock No.:
- 234-7155
- Mfr. Part No.:
- RJK0651DPB-00#J5
- Manufacturer:
- Renesas Electronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD466.00
(exc. GST)
TWD489.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 2,500 unit(s) shipping from December 04, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD93.20 | TWD466.00 |
| 50 - 95 | TWD91.00 | TWD455.00 |
| 100 - 245 | TWD88.80 | TWD444.00 |
| 250 - 995 | TWD87.20 | TWD436.00 |
| 1000 + | TWD85.60 | TWD428.00 |
*price indicative
- RS Stock No.:
- 234-7155
- Mfr. Part No.:
- RJK0651DPB-00#J5
- Manufacturer:
- Renesas Electronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-669 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-669 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 60 V. It is capable of 4.5 V gate drive.
High speed switching
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Related links
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