onsemi NTH N-Channel MOSFET, 68 A, 1.2 kV N, 4-Pin TO-247 NTH4L022N120M3S
- RS Stock No.:
- 233-6854
- Mfr. Part No.:
- NTH4L022N120M3S
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD713.00
(exc. GST)
TWD748.65
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 126 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD713.00 |
| 10 - 49 | TWD699.00 |
| 50 - 99 | TWD686.00 |
| 100 - 199 | TWD672.00 |
| 200 + | TWD659.00 |
*price indicative
- RS Stock No.:
- 233-6854
- Mfr. Part No.:
- NTH4L022N120M3S
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | -0.45V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 325W | |
| Maximum Operating Temperature | 175°C | |
| Height | 41.36mm | |
| Standards/Approvals | RoHS | |
| Width | 5.2mm | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs -0.45V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 325W | ||
Maximum Operating Temperature 175°C | ||
Height 41.36mm | ||
Standards/Approvals RoHS | ||
Width 5.2mm | ||
Length 15.8mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
The ON Semiconductor NTH4L022N120M3S is SiC power, single N-Channel MOSFET. It is available in a TO247-4L package. With Drain to Source voltage of 1200 V and continuous drain current of 68 A, the NTH4L022N120M3S is used in applications like Solar Inverters, Electric Vehicle Charging Stations, UPS (Uninterruptible Power Supplies), Energy Storage Systems, SMPS (Switch Mode Power Supplies).
The typical RDS(on) for this device is 22 mꭥ with VGS of 18 V
The device offers low switching losses
It is 100% avalanche tested
Related links
- RS PRO Black 3 mm² Hook Up Wire 30m
- RS PRO RS-172 Temperature & Humidity Data Logger
- 2961105 | Phoenix Contact PCB Mount Power Relay 6A Switching Current, SPDT
- Tedea Huntleigh Low Profile Load Cell Compression Measure
- ABB D45 Pluto Series Safety Controller 6 Safety Outputs, 24 V dc
- TE Connectivity Coaxial Cable RG400 Coaxial, Unterminated
- RS PRO I/O Extension Module for Use with RS PRO Logic Modules Digital
- Fluke 289 Handheld Digital Multimeter 10A ac Max 1000V ac Max