Infineon ISC N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISZ034N06LM5ATMA1
- RS Stock No.:
- 233-4396
- Mfr. Part No.:
- ISZ034N06LM5ATMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 reel of 5000 units)*
TWD159,000.00
(exc. GST)
TWD166,950.00
(inc. GST)
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 20000 | TWD31.80 | TWD159,000.00 |
| 25000 + | TWD30.90 | TWD154,500.00 |
*price indicative
- RS Stock No.:
- 233-4396
- Mfr. Part No.:
- ISZ034N06LM5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 288A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ISC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.4mm | |
| Width | 1.1mm | |
| Standards/Approvals | No | |
| Height | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 288A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ISC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 175°C | ||
Length 3.4mm | ||
Width 1.1mm | ||
Standards/Approvals No | ||
Height 3.4mm | ||
Automotive Standard No | ||
Infineon ISC Series MOSFET, 60V Maximum Drain Source Voltage, 288A Maximum Continuous Drain Current - ISZ034N06LM5ATMA1
This MOSFET is a surface-mount N-channel enhancement device designed for high-current switching in Compact power assemblies. It operates across a wide ambient temperature range and is suited to applications requiring low conduction losses and Rapid gate-driven switching, while being housed in a small TDSON package.
Features and Benefits:
• Maximum continuous drain current 288A for heavy current handling
• Low drain-source resistance 3.4mΩ to reduce conduction losses
• 60V drain-source rating for medium-voltage power stages
• Typical gate charge 53nC enabling efficient switching transitions
• Maximum power dissipation 83W to sustain elevated load conditions
• Gate-source withstand 20V for robust gate-drive margins
• Low drain-source resistance 3.4mΩ to reduce conduction losses
• 60V drain-source rating for medium-voltage power stages
• Typical gate charge 53nC enabling efficient switching transitions
• Maximum power dissipation 83W to sustain elevated load conditions
• Gate-source withstand 20V for robust gate-drive margins
Applications
• Suitable for high-current motor-drive stages
• Used with synchronous buck converters in power supplies
• Ideal for DC power distribution and load switching
• Can be used for battery management and cell balancing
• Suitable for Compact surface-mount power assemblies
• Used with synchronous buck converters in power supplies
• Ideal for DC power distribution and load switching
• Can be used for battery management and cell balancing
• Suitable for Compact surface-mount power assemblies
What allows operation across extreme temperature ranges?
Internal semiconductor structure and tested ratings permit use from −55°C up to 175°C.
How does the package support thermal management?
The TDSON surface-mount package provides a low-profile thermal path for heat dissipation within PCB layouts.
What gate-drive considerations are required for switching performance?
Drive circuitry should accommodate up to 20V gate-source excursion and manage the 53nC typical gate charge for desired switching speed.
How should designers account for conduction losses at high current?
Use the 3.4mΩ Rds(on) Value to calculate I²R losses and verify PCB copper and thermal vias to handle the resulting heat.
What Peak power capability is indicated for sustained operation?
The device is specified with a maximum power dissipation of 83W for continuous thermal design considerations.
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