STMicroelectronics STB37N60 N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 233-3039P
- Mfr. Part No.:
- STB37N60DM2AG
- Manufacturer:
- STMicroelectronics
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Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied on a continuous strip)*
TWD2,710.00
(exc. GST)
TWD2,845.50
(inc. GST)
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In Stock
- Plus 970 unit(s) shipping from September 14, 2026
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Units | Per unit |
|---|---|
| 10 - 99 | TWD271.00 |
| 100 - 249 | TWD265.00 |
| 250 - 499 | TWD259.00 |
| 500 + | TWD251.00 |
*price indicative
- RS Stock No.:
- 233-3039P
- Mfr. Part No.:
- STB37N60DM2AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | STB37N60 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 94mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 210W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Length | 15.85mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 10.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series STB37N60 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 94mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 210W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Length 15.85mm | ||
Standards/Approvals AEC-Q101 | ||
Width 10.4mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
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