STMicroelectronics SCTW70N N-Channel MOSFET, 91 A, 1200 V Enhancement, 3-Pin Hip-247
- RS Stock No.:
- 233-3024P
- Mfr. Part No.:
- SCTW70N120G2V
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal 5 units (supplied in a tube)*
TWD7,685.00
(exc. GST)
TWD8,069.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from May 17, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 - 9 | TWD1,537.00 |
| 10 + | TWD1,507.00 |
*price indicative
- RS Stock No.:
- 233-3024P
- Mfr. Part No.:
- SCTW70N120G2V
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTW70N | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.7V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 547W | |
| Maximum Operating Temperature | 200°C | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Width | 5.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTW70N | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.7V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 547W | ||
Maximum Operating Temperature 200°C | ||
Height 20.15mm | ||
Length 15.75mm | ||
Width 5.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
Related links
- RS PRO I/O Extension Module for Use with RS PRO Logic Modules Digital
- Tedea Huntleigh Low Profile Load Cell Compression Measure
- 2961105 | Phoenix Contact PCB Mount Power Relay 6A Switching Current, SPDT
- RS PRO RS-172 Temperature & Humidity Data Logger
- Fluke 289 Handheld Digital Multimeter 10A ac Max 1000V ac Max
- TE Connectivity Coaxial Cable RG400 Coaxial, Unterminated
- ABB D45 Pluto Series Safety Controller 6 Safety Outputs, 24 V dc
- RS PRO Black 3 mm² Hook Up Wire 30m