Infineon OptiMOS 5 N-Channel MOSFET, 86 A, 60 V, 8-Pin PQFN ISZ0702NLSATMA1
- RS Stock No.:
- 232-6772
- Mfr. Part No.:
- ISZ0702NLSATMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD376.00
(exc. GST)
TWD394.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from October 25, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD75.20 | TWD376.00 |
| 10 - 95 | TWD73.00 | TWD365.00 |
| 100 - 245 | TWD72.00 | TWD360.00 |
| 250 - 495 | TWD69.80 | TWD349.00 |
| 500 + | TWD68.20 | TWD341.00 |
*price indicative
- RS Stock No.:
- 232-6772
- Mfr. Part No.:
- ISZ0702NLSATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PQFN | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.6mΩ | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.4mm | |
| Width | 1.1mm | |
| Standards/Approvals | No | |
| Height | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PQFN | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.6mΩ | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 3.4mm | ||
Width 1.1mm | ||
Standards/Approvals No | ||
Height 3.4mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 60 V, are designed targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
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