Infineon OptiMOS 5 Type N-Channel MOSFET, 71 A, 100 V, 8-Pin SO-8 ISC0805NLSATMA1
- RS Stock No.:
- 232-6765
- Mfr. Part No.:
- ISC0805NLSATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD171.00
(exc. GST)
TWD179.56
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,984 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD85.50 | TWD171.00 |
| 10 - 98 | TWD66.50 | TWD133.00 |
| 100 - 248 | TWD65.50 | TWD131.00 |
| 250 - 498 | TWD64.50 | TWD129.00 |
| 500 + | TWD62.50 | TWD125.00 |
*price indicative
- RS Stock No.:
- 232-6765
- Mfr. Part No.:
- ISC0805NLSATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 71A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS 5 | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.7mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 74W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.35mm | |
| Length | 6.1mm | |
| Width | 1.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 71A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS 5 | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.7mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 74W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.35mm | ||
Length 6.1mm | ||
Width 1.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
Related links
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin SO-8