Infineon CoolMOS Type N-Channel MOSFET, 106 A, 650 V, 3-Pin TO-247 IPW65R018CFD7XKSA1
- RS Stock No.:
- 232-3049
- Mfr. Part No.:
- IPW65R018CFD7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 unit)*
TWD500.00
(exc. GST)
TWD525.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 240 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD500.00 |
| 10 - 99 | TWD491.00 |
| 100 - 249 | TWD480.00 |
| 250 - 499 | TWD470.00 |
| 500 + | TWD462.00 |
*price indicative
- RS Stock No.:
- 232-3049
- Mfr. Part No.:
- IPW65R018CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 106A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Maximum Power Dissipation Pd | 500W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 234nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 106A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Maximum Power Dissipation Pd 500W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 234nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon CFD7 is super junction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and further more supports high power density solutions.
Ultrafast body diode and very low Qrr
650V breakdown voltage
Significantly reduced switching losses compared to competition
Related links
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- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R018CFD7XKSA1