onsemi Type N-Channel MOSFET, 174 A, 150 V N, 8-Pin TDFN NTMTSC4D3N15MC
- RS Stock No.:
- 229-6489
- Mfr. Part No.:
- NTMTSC4D3N15MC
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD366.00
(exc. GST)
TWD384.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 50 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD183.00 | TWD366.00 |
| 10 - 98 | TWD178.50 | TWD357.00 |
| 100 - 248 | TWD174.50 | TWD349.00 |
| 250 - 498 | TWD170.50 | TWD341.00 |
| 500 + | TWD167.00 | TWD334.00 |
*price indicative
- RS Stock No.:
- 229-6489
- Mfr. Part No.:
- NTMTSC4D3N15MC
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 293W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.1mm | |
| Width | 1.2 mm | |
| Height | 8.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 293W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 8.1mm | ||
Width 1.2 mm | ||
Height 8.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor industrial power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable flank capable for enhanced optical inspection. It is used in reverser battery protection, switching power supplies and power switches.
Compact design
Minimize conduction losses
Minimize driver losses
Enhanced optical inspection
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