onsemi NTMFS Type N-Channel MOSFET, 110 A, 100 V N, 8-Pin PQFN NTMFS7D8N10GTWG
- RS Stock No.:
- 229-6473
- Mfr. Part No.:
- NTMFS7D8N10GTWG
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 229-6473
- Mfr. Part No.:
- NTMFS7D8N10GTWG
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTMFS | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 187W | |
| Forward Voltage Vf | 0.84V | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 6mm | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTMFS | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 187W | ||
Forward Voltage Vf 0.84V | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 6mm | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The ON Semiconductor N-channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Minimize conduction losses
High peak UIS current capability for ruggedness
Halogen-free
Pb-free
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