onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-220 FCPF360N65S3R0L-F154
- RS Stock No.:
- 229-6323
- Mfr. Part No.:
- FCPF360N65S3R0L-F154
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD508.00
(exc. GST)
TWD533.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD101.60 | TWD508.00 |
| 10 - 95 | TWD99.00 | TWD495.00 |
| 100 - 245 | TWD95.20 | TWD476.00 |
| 250 - 495 | TWD93.60 | TWD468.00 |
| 500 + | TWD91.40 | TWD457.00 |
*price indicative
- RS Stock No.:
- 229-6323
- Mfr. Part No.:
- FCPF360N65S3R0L-F154
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | SUPERFET III | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.2mm | |
| Width | 10.4 mm | |
| Height | 4.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series SUPERFET III | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 16.2mm | ||
Width 10.4 mm | ||
Height 4.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SUPER FET series is brand new high voltage super junction MOSFET that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Low effective output capacitance
100% avalanche tested
Pb−free
RoHS compliant
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