Vishay TrenchFET Type N-Channel MOSFET, 114 A, 40 V Enhancement, 4-Pin SO-8 SQJ152EP-T1_GE3
- RS Stock No.:
- 228-2957
- Mfr. Part No.:
- SQJ152EP-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD268.00
(exc. GST)
TWD281.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from August 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD26.80 | TWD268.00 |
| 50 - 90 | TWD26.10 | TWD261.00 |
| 100 - 240 | TWD25.40 | TWD254.00 |
| 250 - 990 | TWD24.80 | TWD248.00 |
| 1000 + | TWD24.30 | TWD243.00 |
*price indicative
- RS Stock No.:
- 228-2957
- Mfr. Part No.:
- SQJ152EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 114A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 114A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 40 V power MOSFET.
100 % Rg and UIS tested
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