Vishay P-Channel 12 V Type P-Channel MOSFET, 137 A, 12 V, 4-Pin PowerPAK (8x8L) SQJ123ELP-T1_GE3
- RS Stock No.:
- 225-9943
- Mfr. Part No.:
- SQJ123ELP-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD426.00
(exc. GST)
TWD447.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 11,900 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD42.60 | TWD426.00 |
| 50 - 90 | TWD41.50 | TWD415.00 |
| 100 - 240 | TWD40.60 | TWD406.00 |
| 250 - 990 | TWD39.70 | TWD397.00 |
| 1000 + | TWD38.90 | TWD389.00 |
*price indicative
- RS Stock No.:
- 225-9943
- Mfr. Part No.:
- SQJ123ELP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 137A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | P-Channel 12 V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 6.6mΩ | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | -0.76V | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.73 mm | |
| Length | 10.41mm | |
| Height | 2.38mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 137A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series P-Channel 12 V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 6.6mΩ | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf -0.76V | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.73 mm | ||
Length 10.41mm | ||
Height 2.38mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
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