Infineon SN7002I N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 SN7002IXTSA1
- RS Stock No.:
- 225-0584
- Mfr. Part No.:
- SN7002IXTSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
TWD390.00
(exc. GST)
TWD410.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 700 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | TWD3.90 | TWD390.00 |
| 200 - 200 | TWD3.80 | TWD380.00 |
| 300 - 300 | TWD3.70 | TWD370.00 |
| 400 - 400 | TWD3.60 | TWD360.00 |
| 500 + | TWD3.50 | TWD350.00 |
*price indicative
- RS Stock No.:
- 225-0584
- Mfr. Part No.:
- SN7002IXTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SN7002I | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 360mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.1mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SN7002I | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 360mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 1.1mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 3.4mm | ||
Automotive Standard No | ||
The Infineon SN7002I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.
PCB-space and cost savings
Gate drive flexibility
Reduced design complexity
Environmentally friendly
High overall efficiency
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