Infineon BSS123I Type N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223

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Subtotal (1 reel of 3000 units)*

TWD3,000.00

(exc. GST)

TWD3,150.00

(inc. GST)

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3000 - 6000TWD1.00TWD3,000.00
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RS Stock No.:
225-0556
Mfr. Part No.:
BSS123IXTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

190mA

Maximum Drain Source Voltage Vds

100V

Series

BSS123I

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

0.63nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

0.5W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Height

1.8mm

Length

6.7mm

Width

3.7 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon BSS123I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.

PCB-space and cost savings

Gate drive flexibility

Reduced design complexity

Environmentally friendly

High overall efficiency

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