Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263 IPD26N06S2L35ATMA2
- RS Stock No.:
- 223-8515
- Mfr. Part No.:
- IPD26N06S2L35ATMA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 20 units)*
TWD414.00
(exc. GST)
TWD434.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 3,240 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | TWD20.70 | TWD414.00 |
| 40 - 80 | TWD20.20 | TWD404.00 |
| 100 - 220 | TWD19.70 | TWD394.00 |
| 240 - 480 | TWD19.20 | TWD384.00 |
| 500 + | TWD18.80 | TWD376.00 |
*price indicative
- RS Stock No.:
- 223-8515
- Mfr. Part No.:
- IPD26N06S2L35ATMA2
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Maximum Power Dissipation Pd | 68W | |
| Forward Voltage Vf | 0.95V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Maximum Power Dissipation Pd 68W | ||
Forward Voltage Vf 0.95V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Related links
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
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- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IPB80N06S2L09ATMA2
