Infineon HEXFET N-Channel MOSFET, 345 A, 60 V, 8-Pin DirectFET

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Subtotal (1 reel of 4000 units)*

TWD610,800.00

(exc. GST)

TWD641,360.00

(inc. GST)

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Units
Per unit
Per Reel*
4000 - 4000TWD152.70TWD610,800.00
8000 +TWD148.10TWD592,400.00

*price indicative

RS Stock No.:
223-8454
Mfr. Part No.:
AUIRF7749L2TR
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

345A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.5mΩ

Maximum Power Dissipation Pd

341W

Typical Gate Charge Qg @ Vgs

183nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

60V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon single N-channel HEXFET power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging platform coupled with the latest silicon technology allows this MOSFET to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications.

Advanced process technology

Exceptionally small footprint and low profile

High power density

Low parasitic parameters

Dual sided cooling

175°C Operating temperature

Lead free

RoHS compliant

Halogen free

Automotive qualified

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