Infineon IPL60R N-Channel MOSFET, 12 A, 650 V Enhancement, 5-Pin ThinPAK IPL65R195C7AUMA1
- RS Stock No.:
- 222-4920
- Mfr. Part No.:
- IPL65R195C7AUMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD673.00
(exc. GST)
TWD706.65
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,200 unit(s) shipping from November 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD134.60 | TWD673.00 |
| 10 - 95 | TWD131.40 | TWD657.00 |
| 100 - 245 | TWD127.80 | TWD639.00 |
| 250 - 495 | TWD125.00 | TWD625.00 |
| 500 + | TWD121.40 | TWD607.00 |
*price indicative
- RS Stock No.:
- 222-4920
- Mfr. Part No.:
- IPL65R195C7AUMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPL60R | |
| Package Type | ThinPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 195mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 75W | |
| Forward Voltage Vf | 800mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Width | 8.1mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPL60R | ||
Package Type ThinPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 195mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 75W | ||
Forward Voltage Vf 800mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Width 8.1mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding CoolMOS™ quality
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