Infineon HEXFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF
- RS Stock No.:
- 222-4747
- Mfr. Part No.:
- IRFH8311TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 15 units)*
TWD360.00
(exc. GST)
TWD378.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 1,425 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | TWD24.00 | TWD360.00 |
| 30 - 75 | TWD23.40 | TWD351.00 |
| 90 - 225 | TWD22.70 | TWD340.50 |
| 240 - 465 | TWD22.30 | TWD334.50 |
| 480 + | TWD21.70 | TWD325.50 |
*price indicative
- RS Stock No.:
- 222-4747
- Mfr. Part No.:
- IRFH8311TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 96W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.15 mm | |
| Height | 1.17mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 96W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 6.15 mm | ||
Height 1.17mm | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDSon (<1.15 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
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