Infineon HEXFET N-Channel MOSFET, 12.5 A, 80 V, 6-Pin PQFN IRL80HS120
- RS Stock No.:
- 217-2640
- Mfr. Part No.:
- IRL80HS120
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD696.00
(exc. GST)
TWD730.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,820 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 980 | TWD34.80 | TWD696.00 |
| 1000 - 1980 | TWD33.90 | TWD678.00 |
| 2000 + | TWD31.70 | TWD634.00 |
*price indicative
- RS Stock No.:
- 217-2640
- Mfr. Part No.:
- IRL80HS120
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 11.5W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.1mm | |
| Length | 2.1mm | |
| Width | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 11.5W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.1mm | ||
Length 2.1mm | ||
Width 1mm | ||
Automotive Standard No | ||
The Infineon Available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.
Lowest FOM (R DS(on) x Q g/gd)
Optimized Q g, C oss, and Q rr for fast switching
Logic level compatibility
Tiny PQFN 2x2mm package
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