Infineon CoolMOS Type N-Channel MOSFET, 33 A, 700 V Enhancement, 4-Pin TO-247 IPZ65R065C7XKSA1
- RS Stock No.:
- 222-4729
- Mfr. Part No.:
- IPZ65R065C7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD691.00
(exc. GST)
TWD725.56
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 318 unit(s) shipping from August 31, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD345.50 | TWD691.00 |
| 10 - 98 | TWD337.50 | TWD675.00 |
| 100 - 248 | TWD330.50 | TWD661.00 |
| 250 - 498 | TWD323.50 | TWD647.00 |
| 500 + | TWD319.50 | TWD639.00 |
*price indicative
- RS Stock No.:
- 222-4729
- Mfr. Part No.:
- IPZ65R065C7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 171W | |
| Height | 21.1mm | |
| Width | 5.21mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 171W | ||
Height 21.1mm | ||
Width 5.21mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased MOSFET dv/dt ruggedness
Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
Pb-free plating, halogen free mold compound
Related links
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- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 4-Pin TO-247 IPZ65R045C7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247 IPW65R048CFDAFKSA1
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- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251