Infineon CoolMOS N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R1K4P7SAKMA1
- RS Stock No.:
- 222-4708
- Mfr. Part No.:
- IPSA70R1K4P7SAKMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 75 units)*
TWD1,702.50
(exc. GST)
TWD1,788.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 1,500 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 150 | TWD22.70 | TWD1,702.50 |
| 225 - 300 | TWD21.90 | TWD1,642.50 |
| 375 + | TWD20.50 | TWD1,537.50 |
*price indicative
- RS Stock No.:
- 222-4708
- Mfr. Part No.:
- IPSA70R1K4P7SAKMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 22.7W | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Height | 6.1mm | |
| Width | 2.38mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 22.7W | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Height 6.1mm | ||
Width 2.38mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
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