Infineon CoolMOS Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220 IPP020N08N5AKSA1

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Subtotal (1 pack of 2 units)*

TWD168.00

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TWD176.40

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8TWD84.00TWD168.00
10 - 98TWD82.50TWD165.00
100 - 248TWD80.50TWD161.00
250 - 498TWD79.00TWD158.00
500 +TWD77.50TWD155.00

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Packaging Options:
RS Stock No.:
222-4691
Mfr. Part No.:
IPP020N08N5AKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

178nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Height

4.57mm

Length

10.36mm

Standards/Approvals

No

Width

15.95 mm

Automotive Standard

No

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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