Infineon CoolMOS N-Channel MOSFET, 14 A, 900 V Enhancement, 3-Pin TO-220 IPA95R450P7XKSA1
- RS Stock No.:
- 222-4647
- Mfr. Part No.:
- IPA95R450P7XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD543.00
(exc. GST)
TWD570.15
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 75 unit(s) shipping from September 21, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD108.60 | TWD543.00 |
| 10 - 95 | TWD105.80 | TWD529.00 |
| 100 - 245 | TWD103.20 | TWD516.00 |
| 250 - 495 | TWD100.60 | TWD503.00 |
| 500 + | TWD93.20 | TWD466.00 |
*price indicative
- RS Stock No.:
- 222-4647
- Mfr. Part No.:
- IPA95R450P7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Fully optimized portfolio
Best-in-class Cool MOS™ quality and reliability
Integrated Zener Diode ESD protection
Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss
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