Infineon HEXFET N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247 AUIRFP4568

The image is for reference only, please refer to product details and specifications

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal (1 unit)*

TWD700.00

(exc. GST)

TWD735.00

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
1 - 9TWD700.00
10 - 99TWD683.00
100 - 249TWD665.00
250 - 499TWD650.00
500 +TWD638.00

*price indicative

Packaging Options:
RS Stock No.:
222-4612
Mfr. Part No.:
AUIRFP4568
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

171A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-247

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

151nC

Maximum Power Dissipation Pd

517W

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

175°C

Width

20.7mm

Length

15.87mm

Standards/Approvals

No

Height

5.31mm

Automotive Standard

AEC-Q101

The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced Planar Technology

Dual N Channel MOSFET Low On-Resistance

Logic Level Gate Drive

Related links