DiodesZetex DMN N-Channel MOSFET, 4.6 A, 30 V Enhancement, 3-Pin X4-DSN DMN3061LCA3-7
- RS Stock No.:
- 222-2838
- Mfr. Part No.:
- DMN3061LCA3-7
- Manufacturer:
- DiodesZetex
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD305.00
(exc. GST)
TWD320.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from November 08, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 475 | TWD12.20 | TWD305.00 |
| 500 - 975 | TWD11.90 | TWD297.50 |
| 1000 - 2475 | TWD11.50 | TWD287.50 |
| 2500 - 4975 | TWD11.30 | TWD282.50 |
| 5000 + | TWD11.00 | TWD275.00 |
*price indicative
- RS Stock No.:
- 222-2838
- Mfr. Part No.:
- DMN3061LCA3-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | X4-DSN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Maximum Power Dissipation Pd | 1.88W | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.04mm | |
| Standards/Approvals | No | |
| Height | 220μm | |
| Length | 640μm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type X4-DSN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Maximum Power Dissipation Pd 1.88W | ||
Maximum Gate Source Voltage Vgs 12V | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Width 1.04mm | ||
Standards/Approvals No | ||
Height 220μm | ||
Length 640μm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small signals MOSFET with as really small footprint.
Low Qg & Qgd
Small Footprint
Low Profile 0.20mm Height
Totally Lead-Free & Fully RoHS Compliant
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