DiodesZetex DMG1012UWQ Type N-Channel MOSFET, 950 mA, 20 V Enhancement, 3-Pin SOT-323 DMG1012UWQ-7
- RS Stock No.:
- 222-2825
- Mfr. Part No.:
- DMG1012UWQ-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 50 units)*
TWD320.00
(exc. GST)
TWD336.00
(inc. GST)
Add 250 units to get free delivery
In Stock
- 5,700 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | TWD6.40 | TWD320.00 |
| 100 - 200 | TWD6.20 | TWD310.00 |
| 250 - 450 | TWD6.10 | TWD305.00 |
| 500 - 950 | TWD5.90 | TWD295.00 |
| 1000 + | TWD5.80 | TWD290.00 |
*price indicative
- RS Stock No.:
- 222-2825
- Mfr. Part No.:
- DMG1012UWQ-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-323 | |
| Series | DMG1012UWQ | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.29W | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-323 | ||
Series DMG1012UWQ | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.29W | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Related links
- DiodesZetex DMG1012UWQ Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
- onsemi NTZS3151P Type P-Channel MOSFET 20 V Enhancement, 6-Pin SOT-563 NTZS3151PT1G
- onsemi NTZS3151P Type P-Channel MOSFET 20 V Enhancement, 6-Pin SOT-563
- Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1
- Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-88
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323 DMN2710UWQ-7
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323 DMN2710UW-7