DiodesZetex Dual 2N7002 Type N-Channel MOSFET, 261 mA, 60 V Enhancement, 6-Pin SOT-363 2N7002DWK-7
- RS Stock No.:
- 222-2692
- Mfr. Part No.:
- 2N7002DWK-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 50 units)*
TWD205.00
(exc. GST)
TWD215.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | TWD4.10 | TWD205.00 |
| 100 - 200 | TWD4.00 | TWD200.00 |
| 250 - 450 | TWD3.90 | TWD195.00 |
| 500 - 950 | TWD3.80 | TWD190.00 |
| 1000 + | TWD3.70 | TWD185.00 |
*price indicative
- RS Stock No.:
- 222-2692
- Mfr. Part No.:
- 2N7002DWK-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 261mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002 | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.33W | |
| Typical Gate Charge Qg @ Vgs | 0.51nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 261mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002 | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.33W | ||
Typical Gate Charge Qg @ Vgs 0.51nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
The DiodesZetex dual N-Channel MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Related links
- DiodesZetex Dual 2N7002 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363 DMN62D4LDW-7
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363 DMN66D0LDWQ-7
- Toshiba Dual 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363 SSM6N7002KFU
- Toshiba Dual 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual 2 Type N-Channel MOSFET 6-Pin SOT-363