onsemi NVTFS Type N-Channel MOSFET, 28.3 A, 30 V Enhancement, 8-Pin WDFN NVTFS4C02NTAG
- RS Stock No.:
- 221-6760
- Mfr. Part No.:
- NVTFS4C02NTAG
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD519.00
(exc. GST)
TWD545.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 1,430 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD51.90 | TWD519.00 |
| 20 - 90 | TWD50.60 | TWD506.00 |
| 100 - 240 | TWD49.40 | TWD494.00 |
| 250 - 490 | TWD48.10 | TWD481.00 |
| 500 + | TWD47.00 | TWD470.00 |
*price indicative
- RS Stock No.:
- 221-6760
- Mfr. Part No.:
- NVTFS4C02NTAG
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDFN | |
| Series | NVTFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 0.8 mm | |
| Height | 3.15mm | |
| Standards/Approvals | No | |
| Length | 3.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDFN | ||
Series NVTFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 0.8 mm | ||
Height 3.15mm | ||
Standards/Approvals No | ||
Length 3.15mm | ||
Automotive Standard No | ||
The ON Semiconductor Automotive power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. The wettable flank option available for enhanced optical inspection. It used AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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