onsemi NTMFS1D7N Type N-Channel MOSFET, 170 A, 30 V Enhancement, 5-Pin DFN NTMFS1D7N03CGT1G
- RS Stock No.:
- 221-6730
- Mfr. Part No.:
- NTMFS1D7N03CGT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD272.00
(exc. GST)
TWD285.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from October 15, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD27.20 | TWD272.00 |
| 20 - 90 | TWD26.50 | TWD265.00 |
| 100 - 240 | TWD25.90 | TWD259.00 |
| 250 - 490 | TWD25.20 | TWD252.00 |
| 500 + | TWD24.60 | TWD246.00 |
*price indicative
- RS Stock No.:
- 221-6730
- Mfr. Part No.:
- NTMFS1D7N03CGT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | DFN | |
| Series | NTMFS1D7N | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.74mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 87W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.3mm | |
| Length | 5.3mm | |
| Width | 1.1 mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type DFN | ||
Series NTMFS1D7N | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.74mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 87W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 6.3mm | ||
Length 5.3mm | ||
Width 1.1 mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
The ON Semiconductor 30V of power MOSFET used 170 A of drain current with single N−channel. It improve inrush current management and improve system efficiency.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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