Infineon HEXFET Type N-Channel MOSFET & Diode, 42 A, 55 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 220-7489
- Mfr. Part No.:
- IRFR1010ZTRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2000 units)*
TWD46,800.00
(exc. GST)
TWD49,140.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,000 unit(s) shipping from June 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 8000 | TWD23.40 | TWD46,800.00 |
| 10000 + | TWD22.90 | TWD45,800.00 |
*price indicative
- RS Stock No.:
- 220-7489
- Mfr. Part No.:
- IRFR1010ZTRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 460nC | |
| Maximum Power Dissipation Pd | 366W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 460nC | ||
Maximum Power Dissipation Pd 366W | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Height 20.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Normal level : Optimized for 10 V gate drive voltage
Industry standard surface-mount power package
Capable of being wave-soldered
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