Infineon StrongIRFET Type N-Channel MOSFET & Diode, 40 A, 40 V Enhancement, 3-Pin ISOMETRIC IRF6613TRPBF
- RS Stock No.:
- 220-7474
- Mfr. Part No.:
- IRF6613TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD599.00
(exc. GST)
TWD628.95
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 9,445 unit(s) shipping from September 07, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 1195 | TWD119.80 | TWD599.00 |
| 1200 - 2395 | TWD116.80 | TWD584.00 |
| 2400 + | TWD109.20 | TWD546.00 |
*price indicative
- RS Stock No.:
- 220-7474
- Mfr. Part No.:
- IRF6613TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | StrongIRFET | |
| Package Type | ISOMETRIC | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Length | 6.35mm | |
| Standards/Approvals | No | |
| Height | 0.68mm | |
| Width | 5.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series StrongIRFET | ||
Package Type ISOMETRIC | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Length 6.35mm | ||
Standards/Approvals No | ||
Height 0.68mm | ||
Width 5.05mm | ||
Automotive Standard No | ||
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Low parasitic (1-2 NH) inductance package
Wide availability from distribution partners
Industry standard qualification level
High current carrying capability
Optimum thermal performance
Compact form factor
High efficiency
Environmentally friendly
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