Infineon C7 GOLD N-Channel MOSFET & Diode, 83 A, 650 V Enhancement, 10-Pin HDSOP IPDD60R080G7XTMA1
- RS Stock No.:
- 220-7418
- Mfr. Part No.:
- IPDD60R080G7XTMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD565.00
(exc. GST)
TWD593.24
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,700 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 424 | TWD282.50 | TWD565.00 |
| 426 - 848 | TWD278.00 | TWD556.00 |
| 850 + | TWD272.00 | TWD544.00 |
*price indicative
- RS Stock No.:
- 220-7418
- Mfr. Part No.:
- IPDD60R080G7XTMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HDSOP | |
| Series | C7 GOLD | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 174W | |
| Length | 6.6mm | |
| Height | 21.11mm | |
| Standards/Approvals | No | |
| Width | 2.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HDSOP | ||
Series C7 GOLD | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 174W | ||
Length 6.6mm | ||
Height 21.11mm | ||
Standards/Approvals No | ||
Width 2.35mm | ||
Automotive Standard No | ||
The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V Cool MOS G7 super junction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg
Innovative top-side cooling concept
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance
TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves e efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
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