Infineon OptiMOS 3 N-Channel MOSFET & Diode, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB031N08N5ATMA1

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Subtotal (1 pack of 5 units)*

TWD753.00

(exc. GST)

TWD790.65

(inc. GST)

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  • Plus 990 unit(s) shipping from October 19, 2026
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Units
Per unit
Per Pack*
5 - 245TWD150.60TWD753.00
250 - 495TWD146.80TWD734.00
500 +TWD144.40TWD722.00

*price indicative

Packaging Options:
RS Stock No.:
220-7378
Mfr. Part No.:
IPB031N08N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Optimized for synchronous rectification

Ideal for high switching frequency

Output capacitance reduction of up to 44%

R DS(on) reduction of up to 44%

Highest system efficiency

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

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