Infineon HEXFET Type N-Channel MOSFET & Diode, 180 A, 100 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 220-7344
- Mfr. Part No.:
- AUIRFP4110
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 25 units)*
TWD3,435.00
(exc. GST)
TWD3,606.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 275 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | TWD137.40 | TWD3,435.00 |
| 50 - 75 | TWD134.60 | TWD3,365.00 |
| 100 + | TWD131.90 | TWD3,297.50 |
*price indicative
- RS Stock No.:
- 220-7344
- Mfr. Part No.:
- AUIRFP4110
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 370W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Width | 20.7 mm | |
| Height | 5.31mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 370W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Width 20.7 mm | ||
Height 5.31mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon AUIRFP4110 specifically designed for Automotive applications, this HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced process technology
Ultra-low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
Related links
- Infineon HEXFET Type N-Channel MOSFET & Diode 100 V Enhancement, 3-Pin TO-247 AUIRFP4110
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247 IRFP4110PBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220AB
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRFS4010TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRLB4030PBF