Infineon HEXFET Type N-Channel MOSFET, 23 A, 30 V TO-252

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 2000 units)*

TWD21,400.00

(exc. GST)

TWD22,480.00

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 4,000 unit(s) shipping from March 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2000 - 2000TWD10.70TWD21,400.00
4000 +TWD10.30TWD20,600.00

*price indicative

RS Stock No.:
218-3127
Mfr. Part No.:
IRLR2703TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

65mΩ

Maximum Power Dissipation Pd

341W

Typical Gate Charge Qg @ Vgs

162nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

5.31 mm

Length

15.87mm

Height

20.7mm

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET series N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.

Ultra Low On-Resistance

Fast Switching

Fully Avalanche Rated

Lead free

Related links